بر اساس عنوان
104
Errors in Determining the Center of a Resonance Line Using Sinusoidal Frequency (Phase) Modulation113
Errors in directional measurements using the relative amplitudes of signals received by two aerials126
Errors in measurements of linewidth of single-crystal ferrites due to nonideal microwave components161
Errors in the Parallel Connection of a 100 : 1 Series-Parallel Buildup of Four-Terminal Resistors196
Errors sources elimination for accurate evaluation of displacement using global positioning system210
Errors-in-variables identification of dynamic bilinear systems in the case of coloured output noise345
Er-Yb-doped LMA fiber structures for high energy amplification of narrow linewidth pulses at 1.5μm473
ESB-based architecture for data integration and sharing of crop germplasm resources investigation514
Escape from the speed down areas on training of backpropagation algorithm by using a jumping method515
Escape Maps587
e-Science Infrastructure Integration Invariants to Enable HTC and HPC Interoperability Applications680
ESD Design Strategies for High-Speed Digital and RF Circuits in Deeply Scaled Silicon Technologies684
ESD device performance analysis in a 14nm FinFET SOI CMOS technology: Fin-based versus planar-based701
ESD event simulation automation using automatic extraction of the relevant portion of a full chip761
ESD performance analysis of automotive application based on improved Integrated Circuit ESD model793
ESD Protection Design And Applications To Bidirectional Antenna Protection For Sub-5 nm Gate Oxides802
ESD protection design for broadband RF circuits with decreasing-size distributed protection scheme825
ESD protection design in a 0.18-μm salicide CMOS technology by using substrate-triggered technique834
ESD protection design with adjustable snapback behavior for 5-V application in 100nm CMOS process888
ESD protection scheme using CMOS compatible vertical bipolar transistor for 130 nm CMOS generation911
ESD reliability comparison of different layout topologies in the 0.25-μm 60-V nLDMOS power devices946
ESD stress in RF-MEMS capacitive switches: The influence of dielectric material deposition method954
ESD testing